IGBTModel - Revision history

Carlosgs91 at 15:12, 5 November 2015

2015-11-05T15:12:32Z

Carlosgs91: /* References */

2015-10-26T13:26:09Z

‎References

Carlosgs91: /* References */

2015-10-26T13:25:49Z

‎References

Carlosgs91: /* Introduction */

2015-10-23T11:56:21Z

‎Introduction

Carlosgs91: /* References */

2015-10-23T11:55:48Z

‎References

Carlosgs91 at 11:54, 23 October 2015

2015-10-23T11:54:42Z

Carlosgs91 at 11:52, 23 October 2015

2015-10-23T11:52:18Z

Carlosgs91 at 10:02, 23 October 2015

2015-10-23T10:02:28Z

Carlosgs91 at 18:24, 10 October 2015

2015-10-10T18:24:56Z

Carlosgs91 at 18:20, 10 October 2015

2015-10-10T18:20:04Z

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+{{DISPLAYTITLE:PRONTO - IGBT Model}}
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 == References ==
-[1] <a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1310374" target="_new">"Physical CAD model for high-voltage IGBTs based on lumped-charge approach", IEEE Transactions on Power Electronics, vol. 19, pages 885-893, 2004</a>
+[1] <html><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1310374" target="_new">"Physical CAD model for high-voltage IGBTs based on lumped-charge approach", IEEE Transactions on Power Electronics, vol. 19, pages 885-893, 2004</a></html>
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 == References ==
-[1] [http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1310374 Iannuzzo, F, Busatto, G., "Physical CAD model for high-voltage IGBTs based on lumped-charge approach", IEEE Transactions on Power Electronics, vol. 19, pages 885-893, 2004].
+[1] <a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1310374" target="_new">"Physical CAD model for high-voltage IGBTs based on lumped-charge approach", IEEE Transactions on Power Electronics, vol. 19, pages 885-893, 2004</a>
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 {| style="margin: 0 auto;"
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-| [[File:Fig2.png|frame|Fig. 2. IGBT model based on Lumped-Charge approach from [1].]]
+| [[File:Fig2.png|frame|Fig. 2. IGBT model based on Lumped-Charge approach as taken from [1].]]
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 == References ==
-[1] [http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1310374 Iannuzzo, F, Busatto, G., "Physical CAD model for high-voltage IGBTs based on lumped-charge approach", Power Electronics, IEEE Transactions on].
+[1] [http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1310374 Iannuzzo, F, Busatto, G., "Physical CAD model for high-voltage IGBTs based on lumped-charge approach", IEEE Transactions on Power Electronics, vol. 19, pages 885-893, 2004].
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 == Abstract ==
-An Insulated Gate Bipolar Transistor (IGBT) model developed on a physical basis is presented. The Lumped-Charge method  has  been  revised  in  order  to  point  out  a  more  general methodology for implementing the model into a circuit form. The model can be implemented in the popular PSpice simulator. The N-channel IGBT structure is described by means of an evolution of the PSPICE level-3 metal oxide semiconductor field  effect  transistor  model.  Simulation results agree well with the experiments both in static, switching and short circuit operations.
+An Insulated Gate Bipolar Transistor (IGBT) model developed on a physical basis is presented. The Lumped-Charge method  has  been  revised  in  order  to  point  out  a  more  general methodology for implementing the model into a circuit form. The model can be implemented in the popular PSpice simulator. The N-channel IGBT structure is described by means of an evolution of the PSPICE level-3 metal oxide semiconductor field  effect  transistor  model.  Simulation results agree well with the experiments both in static, switching and short circuit operations. More information can be found in [1].
 == Introduction  ==
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-| [[File:Fig1.png|frame|Fig. 1.Simulated NPT-IGBT structure and its simplified form.]]
+| [[File:Fig1.png|frame|Fig. 1.Simulated NPT-IGBT structure and its simplified form from [1].]]
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 |}
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 {| style="margin: 0 auto;"
 |-
-| [[File:Fig2.png|frame|Fig. 2. IGBT model based on Lumped-Charge approach.]]
+| [[File:Fig2.png|frame|Fig. 2. IGBT model based on Lumped-Charge approach from [1].]]
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 |}
 In Fig. 2 the four-layer structure of Fig. 1(b) has been rotated and the overall equivalent IGBT circuit has been superimposed to it. Each node of the circuit indicated by numbers 1–8 is associated to each charge of Fig. 1(b).
 == References ==
-[1] [http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1310374 "Physical CAD model for high-voltage IGBTs based on lumped-charge approach"].
+[1] [http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1310374 Iannuzzo, F, Busatto, G., "Physical CAD model for high-voltage IGBTs based on lumped-charge approach", Power Electronics, IEEE Transactions on].
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 == More information ==
 To know more about the model you can consult [http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1310374 "Physical CAD model for high-voltage IGBTs based on lumped-charge approach"].
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 <ul class="modellist">
 <li class="pageactive"><a href="/index.php?title=IGBTModel">Documentation</a></li>
 <li><a href="/index.php?title=Part_Numbers">Part numbers</a></li>
 </ul>
 </div>

← Older revision		Revision as of 18:20, 10 October 2015
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